| Autor: |
Hwang D, Yonkee BP, Addin BS, Farrell RM, Nakamura S, Speck JS, DenBaars S |
| Jazyk: |
angličtina |
| Zdroj: |
Optics express [Opt Express] 2016 Oct 03; Vol. 24 (20), pp. 22875-22880. |
| DOI: |
10.1364/OE.24.022875 |
| Abstrakt: |
We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened). |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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