Electrostatic model of the energy-bending within organic semiconductors: experiment and simulation.
| Autor: | Whitcher TJ; Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur 50603, Malaysia., Wong WS, Talik AN, Woon KL, Chanlek N, Nakajima H, Saisopa T, Songsiriritthigul P |
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| Jazyk: | angličtina |
| Zdroj: | Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2016 Sep 14; Vol. 28 (36), pp. 365002. Date of Electronic Publication: 2016 Jul 08. |
| DOI: | 10.1088/0953-8984/28/36/365002 |
| Abstrakt: | Unlabelled: The interfacial properties between electrodes and the various organic layers that comprise an organic electronic device are of direct relevance in understanding charge injection, extraction and generation. The energy levels and energy-bending of three interfaces; indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate ( Pedot: PSS), ITO/poly(N-vinylcarbazole) (PVK) and Pedot: PSS/PVK were measured using ultraviolet photoelectron spectroscopy (UPS) and x-ray photoelectron spectroscopy (XPS). By decoupling the vacuum shift and energy-bending, the energy-bending at these interfaces can be simulated using an electrostatic model that takes into account the energetic disorder of the polymers. The model is further extended to include blended mixtures of semiconductors at differing concentrations and it was found that a very good agreement exists between the experiment and theory for all interfaces. This suggests that the electrostatic model can be used to describe energy-bending at the interface between any organic semiconductors. Further investigation into the effect of the Gaussian density of states width on energy-bending is warranted. |
| Databáze: | MEDLINE |
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