Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures.

Autor: Balanta MA; Instituto de Física 'Gleb Wataghin', Unicamp, 13083-859 Campinas, SP, Brazil.; Departamento de Física, Universidade Federal de São Carlos, CP 676, São Carlos, SP 13565-905, Brazil., Brasil MJ; Instituto de Física 'Gleb Wataghin', Unicamp, 13083-859 Campinas, SP, Brazil., Iikawa F; Instituto de Física 'Gleb Wataghin', Unicamp, 13083-859 Campinas, SP, Brazil., Mendes UC; Instituto de Física 'Gleb Wataghin', Unicamp, 13083-859 Campinas, SP, Brazil.; Laboratoire Pierre Aigrain, École Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Paris Diderot-Sorbonne Paris Cité, 24 rue Lhomond, 75231 Paris Cedex 05, France., Brum JA; Instituto de Física 'Gleb Wataghin', Unicamp, 13083-859 Campinas, SP, Brazil., Danilov YA; Research Institute, State University Nizhny Novgorod, Russia., Dorokhin MV; Research Institute, State University Nizhny Novgorod, Russia., Vikhrova OV; Research Institute, State University Nizhny Novgorod, Russia., Zvonkov BN; Research Institute, State University Nizhny Novgorod, Russia.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2016 Apr 15; Vol. 6, pp. 24537. Date of Electronic Publication: 2016 Apr 15.
DOI: 10.1038/srep24537
Abstrakt: We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs: Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.
Databáze: MEDLINE
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