| Autor: |
Khurelbaatar Z, Kil YH, Kim TS, Shim KH, Hong H, Choi CJ |
| Jazyk: |
angličtina |
| Zdroj: |
Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2015 Oct; Vol. 15 (10), pp. 7832-5. |
| DOI: |
10.1166/jnn.2015.11195 |
| Abstrakt: |
We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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