Autor: |
Lyu H; Institute of Microelectronics, Tsinghua University , Beijing, China 100084., Wu H; Institute of Microelectronics, Tsinghua University , Beijing, China 100084.; Tsinghua National Laboratory for Information Science and Technology (TNList) , Beijing, China , 100084., Liu J; Institute of Microelectronics, Chinese Academy of Sciences , Haidian District, Beijing, China 100029., Lu Q; Institute of Microelectronics, Tsinghua University , Beijing, China 100084., Zhang J; Institute of Microelectronics, Tsinghua University , Beijing, China 100084., Wu X; Institute of Microelectronics, Tsinghua University , Beijing, China 100084., Li J; Institute of Microelectronics, Chinese Academy of Sciences , Haidian District, Beijing, China 100029., Ma T; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang, China , 110016., Niu J; Institute of Microelectronics, Chinese Academy of Sciences , Haidian District, Beijing, China 100029., Ren W; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang, China , 110016., Cheng H; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Shenyang, China , 110016., Yu Z; Institute of Microelectronics, Tsinghua University , Beijing, China 100084., Qian H; Institute of Microelectronics, Tsinghua University , Beijing, China 100084.; Tsinghua National Laboratory for Information Science and Technology (TNList) , Beijing, China , 100084. |