Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2.

Autor: Zhou L; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States., Xu K; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.; State Key Laboratory of Heavy Oil Processing, China University of Petroleum , Beijing 102249, China., Zubair A; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States., Liao AD; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States., Fang W; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States., Ouyang F; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.; School of Physics and Electronics, State Key Laboratory of Powder Metallurgy, Central South University , Changsha 410083, China., Lee YH; Material Sciences and Engineering, National Tsing-Hua University , Hsinchu 30013, Taiwan., Ueno K; Department of Chemistry, Graduate School of Science and Engineering, Saitama University , Saitama 338-8570, Japan., Saito R; Department of Physics, Tohoku University , Sendai 980-8578, Japan., Palacios T; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States., Kong J; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States., Dresselhaus MS; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.; Department of Physics, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
Jazyk: angličtina
Zdroj: Journal of the American Chemical Society [J Am Chem Soc] 2015 Sep 23; Vol. 137 (37), pp. 11892-5. Date of Electronic Publication: 2015 Sep 09.
DOI: 10.1021/jacs.5b07452
Abstrakt: The controlled synthesis of large-area, atomically thin molybdenum ditelluride (MoTe2) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, we developed a chemical vapor deposition synthesis to produce large-area, uniform, and highly crystalline few-layer 2H and 1T' MoTe2 films. It was found that these two different phases of MoTe2 can be grown depending on the choice of Mo precursor. Because of the highly crystalline structure, the as-grown few-layer 2H MoTe2 films display electronic properties that are comparable to those of mechanically exfoliated MoTe2 flakes. Our growth method paves the way for the large-scale application of MoTe2 in high-performance nanoelectronics and optoelectronics.
Databáze: MEDLINE
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