Atomic Layer Deposition of Hafnium(IV) Oxide on Graphene Oxide: Probing Interfacial Chemistry and Nucleation by using X-ray Absorption and Photoelectron Spectroscopies.

Autor: Alivio TEG; Department of Chemistry, Texas A&M University, College Station, Texas 77842-3012 (USA).; Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843-3003 (USA)., De Jesus LR; Department of Chemistry, Texas A&M University, College Station, Texas 77842-3012 (USA).; Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843-3003 (USA)., Dennis RV; Department of Chemistry, Texas A&M University, College Station, Texas 77842-3012 (USA).; Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843-3003 (USA)., Jia Y; Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-3000 (USA)., Jaye C; Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (USA)., Fischer DA; Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (USA)., Singisetti U; Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-3000 (USA)., Banerjee S; Department of Chemistry, Texas A&M University, College Station, Texas 77842-3012 (USA).; Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843-3003 (USA).
Jazyk: angličtina
Zdroj: Chemphyschem : a European journal of chemical physics and physical chemistry [Chemphyschem] 2015 Sep 14; Vol. 16 (13), pp. 2842-2848. Date of Electronic Publication: 2015 Jul 27.
DOI: 10.1002/cphc.201500434
Abstrakt: Interfacing graphene with metal oxides is of considerable technological importance for modulating carrier density through electrostatic gating as well as for the design of earth-abundant electrocatalysts. Herein, we probe the early stages of the atomic layer deposition (ALD) of HfO 2 on graphene oxide using a combination of C and O K-edge near-edge X-ray absorption fine structure spectroscopies and X-ray photoelectron spectroscopy. Dosing with water is observed to promote defunctionalization of graphene oxide as a result of the reaction between water and hydroxyl/epoxide species, which yields carbonyl groups that further react with migratory epoxide species to release CO 2 . The carboxylates formed by the reaction of carbonyl and epoxide species facilitate binding of Hf precursors to graphene oxide surfaces. The ALD process is accompanied by recovery of the π-conjugated framework of graphene. The delineation of binding modes provides a means to rationally assemble 2D heterostructures.
(© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
Databáze: MEDLINE
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