Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors.

Autor:	Prasai D, Klots AR, Newaz AK; §Department of Physics and Astronomy, San Francisco State University, San Francisco, California 94132, United States., Niezgoda JS, Orfield NJ, Escobar CA, Wynn A, Efimov A; #Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, United States., Jennings GK, Rosenthal SJ; ∇Vanderbilt Institute for Nanoscale Science and Engineering, Nashville, Tennessee 37235, United States.; ○Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States., Bolotin KI
Jazyk:	angličtina
Zdroj:	Nano letters [Nano Lett] 2015 Jul 08; Vol. 15 (7), pp. 4374-80. Date of Electronic Publication: 2015 Jun 03.
DOI:	10.1021/acs.nanolett.5b00514
Abstrakt:	We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogeneous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient nonradiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 leads to large (∼500%) changes in the FRET rate. This in turn allows for up to ∼75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.
Databáze:	MEDLINE
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