Characterization of nanostructured ZnO thin films deposited through vacuum evaporation.

Autor: Alvarado JA; Centro de Investigaciones y de Estudios Avanzados del Instituto Politecnico Nacional, programa de Nanociencias y Nanotecnología, Av. Instituto Politécnico Nacional # 2508, Col. San Pedro Zacatenco, C.P. 07360, México, D. F., México., Maldonado A; Centro de Investigaciones y de Estudios Avanzados del Instituto Politécnico Nacional, Sección de Electrónica del Estado Solido, Av. Instituto Politécnico Nacional # 2508, Col. San Pedro Zacatenco, C.P. 07360, México, D. F., México., Juarez H; Centro de Investigaciones en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria Avenida San Claudio y 14 Sur, 72570, Puebla, México., Pacio M; Centro de Investigaciones en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria Avenida San Claudio y 14 Sur, 72570, Puebla, México., Perez R; Centro de Investigaciones en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria Avenida San Claudio y 14 Sur, 72570, Puebla, México.
Jazyk: angličtina
Zdroj: Beilstein journal of nanotechnology [Beilstein J Nanotechnol] 2015 Apr 16; Vol. 6, pp. 971-5. Date of Electronic Publication: 2015 Apr 16 (Print Publication: 2015).
DOI: 10.3762/bjnano.6.100
Abstrakt: This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.
Databáze: MEDLINE
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