| Autor: |
Swisher SL; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, United States., Volkman SK; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, United States., Subramanian V; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California, United States. |
| Jazyk: |
angličtina |
| Zdroj: |
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2015 May 20; Vol. 7 (19), pp. 10069-75. Date of Electronic Publication: 2015 May 06. |
| DOI: |
10.1021/acsami.5b00893 |
| Abstrakt: |
Semiconducting metal oxides (ZnO, SnO2, In2O3, and combinations thereof) are a uniquely interesting family of materials because of their high carrier mobilities in the amorphous and generally disordered states, and solution-processed routes to these materials are of particular interest to the printed electronics community. Colloidal nanocrystal routes to these materials are particularly interesting, because nanocrystals may be formulated with tunable surface properties into stable inks, and printed to form devices in an additive manner. We report our investigation of an In2O3 nanocrystal synthesis for high-performance solution-deposited semiconductor layers for thin-film transistors (TFTs). We studied the effects of various synthesis parameters on the nanocrystals themselves, and how those changes ultimately impacted the performance of TFTs. Using a sintered film of solution-deposited In2O3 nanocrystals as the TFT channel material, we fabricated devices that exhibit field effect mobility of 10 cm(2)/(V s) and an on/off current ratio greater than 1 × 10(6). These results outperform previous air-stable nanocrystal TFTs, and demonstrate the suitability of colloidal nanocrystal inks for high-performance printed electronics. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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