| Autor: |
Epping JP, Hoekman M, Mateman R, Leinse A, Heideman RG, van Rees A, van der Slot PJ, Lee CJ, Boller KJ |
| Jazyk: |
angličtina |
| Zdroj: |
Optics express [Opt Express] 2015 Jan 26; Vol. 23 (2), pp. 642-8. |
| DOI: |
10.1364/OE.23.000642 |
| Abstrakt: |
In this paper we present a novel fabrication technique for silicon nitride (Si(3)N(4)) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si(3)N(4). Using this technique no stress-induced cracks in the Si(3)N(4) layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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