Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopy.
| Autor: | Grimm SB; Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058, Erlangen, Germany., Jakubka F, Schießl SP, Gannott F, Zaumseil J |
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| Jazyk: | angličtina |
| Zdroj: | Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2014 Dec 17; Vol. 26 (47), pp. 7986-92. Date of Electronic Publication: 2014 Oct 22. |
| DOI: | 10.1002/adma.201403655 |
| Abstrakt: | In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G' mode) depending on hole and electron accumulation serves as a measure for the local charge-carrier density and provides complementary information about charge transport and recombination in ambipolar transistors. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.) |
| Databáze: | MEDLINE |
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