| Autor: |
Qaeed MA; Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia , 11800 Penang, Malaysia., Ibrahim K, Saron KM, Ahmed MA, Allam NK |
| Jazyk: |
angličtina |
| Zdroj: |
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2014 Jul 09; Vol. 6 (13), pp. 9925-31. Date of Electronic Publication: 2014 Jun 20. |
| DOI: |
10.1021/am502217b |
| Abstrakt: |
Indium gallium nitride nanocubes were syntheized via a low-temperature chemical route. Energy-dispersive X-ray spectroscopy and X-ray diffraction analyses confirmed the successful fabrication of (In,Ga)N with various indium mole fractions. The bandgap of the material was tunded as a function of the indium content. The fabricated nanocubes showed a deep level photoluminescence emission at 734 nm as well as in the visible region at 435-520 nm. The Hall effect measurements showed the hole concentration to constantly increase from 6.2 × 10(16) to 2.3 × 10(18) cm(-3), while the hole mobility to decrease from 0.92 to 0.1 cm(2) /(V s) as the doping ratio increases from 0.005 to 0.025 cm(-3). The solar cell device made of nanocubes film containing 0.4 indium on flexible substrates showed a short-circuit current density of 12.47 mA/cm(2) and an open-circuit voltage (Voc) of 0.48 V with 54% fill factor. The relationship between Voc and indium content in the fabricated films was also investigated. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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