Development of the ion source for cluster implantation.

Autor:	Kulevoy TV; Institute for Theoretical and Experimental Physics, Moscow, Russia., Seleznev DN; Institute for Theoretical and Experimental Physics, Moscow, Russia., Kozlov AV; Institute for Theoretical and Experimental Physics, Moscow, Russia., Kuibeda RP; Institute for Theoretical and Experimental Physics, Moscow, Russia., Kropachev GN; Institute for Theoretical and Experimental Physics, Moscow, Russia., Alexeyenko OV; OOO 'Plasma sources', Tomsk, Russia., Dugin SN; State Scientific Center of the Russian Federation State Research Institute for Chemistry and Technology of Organoelement Compounds, Moscow, Russia., Oks EM; OOO 'Plasma sources', Tomsk, Russia., Gushenets VI; OOO 'Plasma sources', Tomsk, Russia., Hershcovitch A; Brookhaven National Laboratory, Upton, New York 11973, USA., Jonson B; Brookhaven National Laboratory, Upton, New York 11973, USA., Poole HJ; PVI, Oxnard, California 93030, USA.
Jazyk:	angličtina
Zdroj:	The Review of scientific instruments [Rev Sci Instrum] 2014 Feb; Vol. 85 (2), pp. 02A501.
DOI:	10.1063/1.4825075
Abstrakt:	Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.
Databáze:	MEDLINE
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