Radiation-sensitive novel polymeric resist materials: iterative synthesis and their EUV fragmentation studies.

Autor: Satyanarayana VS; School of Basic Sciences, Indian Institute of Technology Mandi , Mandi - 175001, Himachal Pradesh, India., Kessler F, Singh V, Scheffer FR, Weibel DE, Ghosh S, Gonsalves KE
Jazyk: angličtina
Zdroj: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2014 Mar 26; Vol. 6 (6), pp. 4223-32. Date of Electronic Publication: 2014 Mar 13.
DOI: 10.1021/am405905p
Abstrakt: Polymerization of (4-(methacryloyloxy)phenyl)dimethylsulfoniumtriflate (MAPDST), as a key monomer containing the radiation sensitive sulfonium functionality, with various other monomers such as methyl methacrylate (MMA), 4-carboxy styrene (STYCOOH), N-vinyl carbazole (NVK) in different molar ratios via free-radical polymerization method is described. This methodology led to the development of a small chemical library of six different radiation sensitive polymers for lithography applications. Fourier transform infrared (FT-IR) and nuclear magnetic resonance (NMR) spectroscopy identified the reaction products as MAPDST homopolymer and MAPDST-MMA, MAPDST-STYCOOH, MAPDST-NVK copolymers. Molecular weights were obtained from gel permeation chromatography and the decomposition temperature (Td) values were determined using thermogravimetric analysis (TGA). The effect of extreme ultraviolet (EUV) irradiation on a thin poly(MAPDST) film was investigated using monochromatic synchrotron excitation. These new polymeric materials were also exposed to electron-beam lithography (EBL) and extreme ultraviolet lithography (EUVL) to achieve 20-nm line patterns.
Databáze: MEDLINE