Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors.

Autor: Carrad DJ; School of Physics, The University of New South Wales , Sydney NSW 2052, Australia., Burke AM, Lyttleton RW, Joyce HJ, Tan HH, Jagadish C, Storm K, Linke H, Samuelson L, Micolich AP
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2014 Jan 08; Vol. 14 (1), pp. 94-100. Date of Electronic Publication: 2013 Dec 18.
DOI: 10.1021/nl403299u
Abstrakt: We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.
Databáze: MEDLINE