| Autor: |
Nakamura F; ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan., Sakaki M, Yamanaka Y, Tamaru S, Suzuki T, Maeno Y |
| Jazyk: |
angličtina |
| Zdroj: |
Scientific reports [Sci Rep] 2013; Vol. 3, pp. 2536. |
| DOI: |
10.1038/srep02536 |
| Abstrakt: |
Recently, "application of electric field (E-field)" has received considerable attention as a new method to induce novel quantum phenomena since application of E-field can tune the electronic states directly with obvious scientific and industrial advantages over other turning methods. However, E-field-induced Mott transitions are rare and typically require high E-field and low temperature. Here we report that the multiband Mott insulator Ca2RuO4 shows unique insulator-metal switching induced by applying a dry-battery level voltage at room temperature. The threshold field Eth ~40 V/cm is much weaker than the Mott gap energy. Moreover, the switching is accompanied by a bulk structural transition. Perhaps the most peculiar of the present findings is that the induced metal can be maintained to low temperature by a weak current. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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