Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.

Autor: Mudd GW; School of Physics and AstronomyThe University of Nottingham, Nottingham, NG7 2RD, UK., Svatek SA, Ren T, Patanè A, Makarovsky O, Eaves L, Beton PH, Kovalyuk ZD, Lashkarev GV, Kudrynskyi ZR, Dmitriev AI
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2013 Oct 25; Vol. 25 (40), pp. 5714-8. Date of Electronic Publication: 2013 Aug 21.
DOI: 10.1002/adma.201302616
Abstrakt: Strong quantization effects and tuneable near-infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ-rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.
(© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
Databáze: MEDLINE
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