Crossover from photodarkening to photobleaching in a-Ge(x)Se(100-x) thin films.

Autor: Kumar RR; Indian Institute of Science Education & Research, Bhopal, India., Barik AR, Vinod EM, Bapna M, Sangunni KS, Adarsh KV
Jazyk: angličtina
Zdroj: Optics letters [Opt Lett] 2013 May 15; Vol. 38 (10), pp. 1682-4.
DOI: 10.1364/OL.38.001682
Abstrakt: In this Letter, we present the interesting results of photodarkening (PD), transition toward photostability, and a slow crossover from PD to photobleaching when composition of the chalcogenide glassy thin film changes from Ge-deficient to rich. A subsequent Raman analysis on these as-prepared and irradiated samples provide the direct evidence of photoinduced structural rearrangement, i.e., photocrystallization of Se and the removal of edge-sharing GeSe4 tetrahedra. Further, our experimental results clearly demonstrate that light-induced effects can be effectively controlled by choosing the right composition and provide valuable information on synthesizing photostable/sensitive glasses.
Databáze: MEDLINE