Doping of organic semiconductors: impact of dopant strength and electronic coupling.
| Autor: | Méndez H; Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin, Germany., Heimel G, Opitz A, Sauer K, Barkowski P, Oehzelt M, Soeda J, Okamoto T, Takeya J, Arlin JB, Balandier JY, Geerts Y, Koch N, Salzmann I |
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| Jazyk: | angličtina |
| Zdroj: | Angewandte Chemie (International ed. in English) [Angew Chem Int Ed Engl] 2013 Jul 22; Vol. 52 (30), pp. 7751-5. Date of Electronic Publication: 2013 Jun 19. |
| DOI: | 10.1002/anie.201302396 |
| Abstrakt: | Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants. (Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.) |
| Databáze: | MEDLINE |
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