| Autor: |
Schukfeh MI; Institut für Halbleitertechnik, Technische Universität Braunschweig, Germany., Storm K, Mahmoud A, Søndergaard RR, Szwajca A, Hansen A, Hinze P, Weimann T, Svensson SF, Bora A, Dick KA, Thelander C, Krebs FC, Lugli P, Samuelson L, Tornow M |
| Jazyk: |
angličtina |
| Zdroj: |
ACS nano [ACS Nano] 2013 May 28; Vol. 7 (5), pp. 4111-8. Date of Electronic Publication: 2013 Apr 30. |
| DOI: |
10.1021/nn400380g |
| Abstrakt: |
We have investigated the electronic transport through 3 μm long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 μA at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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