| Autor: |
Rawat PK; Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India., Paul B, Banerji P |
| Jazyk: |
angličtina |
| Zdroj: |
Nanotechnology [Nanotechnology] 2013 May 31; Vol. 24 (21), pp. 215401. Date of Electronic Publication: 2013 Apr 26. |
| DOI: |
10.1088/0957-4484/24/21/215401 |
| Abstrakt: |
In the present investigation, we report on the thermoelectric properties of PbSe₀.₅Te₀.₅: x (PbI₂) from room temperature to 625 K. High-resolution transmission electron micrographs of the samples reveal endotaxial nanostructures embedded in a PbSe₀.₅Te₀.₅ matrix. The combined effect of mass fluctuation and nanostructures reduces the thermal conductivity to a great extent compared to PbTe and PbSe, without affecting the carrier mobility. As a result, a thermoelectric figure of merit with a value of 1.5 is achieved at 625 K. This value is significantly higher than that of the available state-of-the-art n-type materials. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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