| Autor: |
Fang H; Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA., Tosun M, Seol G, Chang TC, Takei K, Guo J, Javey A |
| Jazyk: |
angličtina |
| Zdroj: |
Nano letters [Nano Lett] 2013 May 08; Vol. 13 (5), pp. 1991-5. Date of Electronic Publication: 2013 Apr 11. |
| DOI: |
10.1021/nl400044m |
| Abstrakt: |
We report here the first degenerate n-doping of few-layer MoS2 and WSe2 semiconductors by surface charge transfer using potassium. High-electron sheet densities of ~1.0 × 10(13) cm(-2) and 2.5 × 10(12) cm(-2) for MoS2 and WSe2 are obtained, respectively. In addition, top-gated WSe2 and MoS2 n-FETs with selective K doping at the metal source/drain contacts are fabricated and shown to exhibit low contact resistances. Uniquely, WSe2 n-FETs are reported for the first time, exhibiting an electron mobility of ~110 cm(2)/V·s, which is comparable to the hole mobility of previously reported p-FETs using the same material. Ab initio simulations were performed to understand K doping of MoS2 and WSe2 in comparison with graphene. The results here demonstrate the need of degenerate doping of few-layer chalcogenides to improve the contact resistances and further realize high performance and complementary channel electronics. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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