Influence of composition on the performance of sintered Cu(In,Ga)Se2 nanocrystal thin-film photovoltaic devices.

Autor: Akhavan VA; Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA., Harvey TB, Stolle CJ, Ostrowski DP, Glaz MS, Goodfellow BW, Panthani MG, Reid DK, Vanden Bout DA, Korgel BA
Jazyk: angličtina
Zdroj: ChemSusChem [ChemSusChem] 2013 Mar; Vol. 6 (3), pp. 481-6. Date of Electronic Publication: 2013 Feb 11.
DOI: 10.1002/cssc.201200677
Abstrakt: Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed in the devices studied was 5.1 % under air mass 1.5 global (AM 1.5 G) illumination, obtained with [Ga]/[In+Ga]=0.32. The variation in PCE with composition is partly a result of bandgap tuning and optimization, but the main influence of nanocrystal composition appeared to be on the quality of the sintered films. The [Cu]/[In+Ga] content was found to be strongly influenced by the [Ga]/[In+Ga] concentration, which appears to be correlated with the morphology of the sintered film. For this reason, only small changes in the [Ga]/[In+Ga] content resulted in significant variations in device efficiency.
(Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
Databáze: MEDLINE
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