| Autor: |
Orsi Gordo V; Physics Department, Federal University of São Carlos, São Carlos 13,565-905, Brazil. yara@df.ufscar.br., Herval LK, Galeti HV, Gobato YG, Brasil MJ, Marques GE, Henini M, Airey RJ |
| Jazyk: |
angličtina |
| Zdroj: |
Nanoscale research letters [Nanoscale Res Lett] 2012 Oct 25; Vol. 7 (1), pp. 592. Date of Electronic Publication: 2012 Oct 25. |
| DOI: |
10.1186/1556-276X-7-592 |
| Abstrakt: |
We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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