| Autor: |
Liu TJ; Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, USA., Prestigiacomo JC, Xiong YM, Adams PW |
| Jazyk: |
angličtina |
| Zdroj: |
Physical review letters [Phys Rev Lett] 2012 Oct 05; Vol. 109 (14), pp. 147207. Date of Electronic Publication: 2012 Oct 05. |
| DOI: |
10.1103/PhysRevLett.109.147207 |
| Abstrakt: |
We present a study of the proximity effect between a ferromagnet and a paramagnetic metal of varying disorder. Thin beryllium films are deposited onto a 5 nm thick layer of the ferromagnetic insulator EuS. This bilayer arrangement induces an exchange field, H(ex), of a few tesla in low-resistance Be films with sheet resistance R≪R(Q), where R(Q)=h/e2 is the quantum resistance. We show that H(ex) survives in very high-resistance films and, in fact, appears to be relatively insensitive to the Be disorder. We exploit this fact to produce a giant low-field magnetoresistance in the correlated-insulator phase of Be films with R≫R(Q). |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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