| Autor: |
Parkinson P; Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia. patrick.parkinson@anu.edu.au, Dodson C, Joyce HJ, Bertness KA, Sanford NA, Herz LM, Johnston MB |
| Jazyk: |
angličtina |
| Zdroj: |
Nano letters [Nano Lett] 2012 Sep 12; Vol. 12 (9), pp. 4600-4. Date of Electronic Publication: 2012 Aug 31. |
| DOI: |
10.1021/nl301898m |
| Abstrakt: |
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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