A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si:H.
| Autor: | Rao S; Università degli Studi Mediterranea di Reggio Calabria, Department of Information Science, Mathematics, Electronics and Transportations (DIMET), Via Graziella Loc. Feo di Vito, 89126, Reggio Calabria, Italy. sandro.rao@unirc.it, Coppola G, Gioffrè MA, Della Corte FG |
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| Jazyk: | angličtina |
| Zdroj: | Optics express [Opt Express] 2012 Apr 23; Vol. 20 (9), pp. 9351-6. |
| DOI: | 10.1364/OE.20.009351 |
| Abstrakt: | A very simple and fast Mach-Zehnder electro-optic modulator based on a p-i-n configuration, operating at λ = 1.55 μm, has been fabricated at 170 °C using the low cost technology of hydrogenated amorphous silicon (a-Si:H). In spite of the device simplicity, refractive index modulation was achieved through the free carrier dispersion effect resulting in characteristic rise and fall times of ~2.5 ns. By reverse biasing the p-i-n device, the voltage-length product was estimated to be V(π)∙L(π) = 40 V∙cm both from static and dynamic measurements. Such bandwidth performance in as-deposited a-Si:H demonstrates the potential of this material for the fabrication of fast active photonic devices integrated on standard microelectronic substrates. (© 2012 Optical Society of America) |
| Databáze: | MEDLINE |
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