| Autor: |
de Oteyza DG; Molecular Foundry, 1 Cyclotron Road, MS 2206R67, CA 94720, USA., Perera PN, Schmidt M, Falch M, Dhuey SD, Harteneck BD, Schwartzberg AM, Schuck PJ, Cabrini S, Olynick DL |
| Jazyk: |
angličtina |
| Zdroj: |
Nanotechnology [Nanotechnology] 2012 May 11; Vol. 23 (18), pp. 185301. Date of Electronic Publication: 2012 Apr 13. |
| DOI: |
10.1088/0957-4484/23/18/185301 |
| Abstrakt: |
Pattern collapse of small or high aspect ratio lines during traditional wet development is a major challenge for miniaturization in nanolithography. Here we report on a new dry process which combines high resolution resist exposure with selective laser ablation to achieve high resolution with high aspect ratios. Using a low power 532 nm laser, we dry develop a normally negative tone methyl acetoxy calix(6)arene in positive tone to reveal sub-20 nm half-pitch features in a ∼100 nm film at aspect ratios unattainable with conventional development with ablation time of 1-2 s per laser pixel (∼600 nm diameter spot). We also demonstrate superior negative tone wet development by combining electron beam exposure with subsequent laser exposure at a non-ablative threshold that requires far less electron beam exposure doses than traditional wet development. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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