Characterization of a photonic strain sensor in silicon-on-insulator technology.

Autor: Westerveld WJ; Faculty of Applied Sciences, Delft University of Technology, Delft, The Netherlands. w.j.westerveld@tudelft.nl, Pozo J, Harmsma PJ, Schmits R, Tabak E, van den Dool TC, Leinders SM, van Dongen KW, Urbach HP, Yousefi M
Jazyk: angličtina
Zdroj: Optics letters [Opt Lett] 2012 Feb 15; Vol. 37 (4), pp. 479-81.
DOI: 10.1364/OL.37.000479
Abstrakt: Recently there has been growing interest in sensing by means of optical microring resonators in photonic integrated circuits that are fabricated in silicon-on-insulator (SOI) technology. Taillaert et al. [Proc. SPIE 6619, 661914 (2007)] proposed the use of a silicon-waveguide-based ring resonator as a strain gauge. However, the strong lateral confinement of the light in SOI waveguides and its corresponding modal dispersion where not taken into account. We present a theoretical understanding, as well as experimental results, of strain applied on waveguide-based microresonators, and find that the following effects play important roles: elongation of the racetrack length, modal dispersion of the waveguide, and the strain-induced change in effective refractive index.
Databáze: MEDLINE