Fabrication of graphene with CuO islands by chemical vapor deposition.

Autor: Qi Y; Materials Science and Engineering Program and Department of Chemistry, Washington State University, Pullman, Washington 99164-4630, USA. yun.qi@wsu.edu, Eskelsen JR, Mazur U, Hipps KW
Jazyk: angličtina
Zdroj: Langmuir : the ACS journal of surfaces and colloids [Langmuir] 2012 Feb 21; Vol. 28 (7), pp. 3489-93. Date of Electronic Publication: 2012 Feb 07.
DOI: 10.1021/la2048163
Abstrakt: Graphene prepared on Cu foil by chemical vapor deposition was studied as a function of post growth cooling conditions. CuO islands embedded in the graphene film were discovered and studied by scanning electron microscopy, atomic force microscopy, and X-ray photoemission spectroscopy. It is shown that nanostructured holes can be formed within a graphene film by reduction using hydrogen cooling immediately after film growth. We also observe the formation of symmetrical oxide islands in these holes. This study provides an easy way to fabricate a graphene + CuO composite, and the method may be extended to other graphene based structures.
Databáze: MEDLINE