| Autor: |
Kumaran R; Advanced Materials and Process Engineering Laboratory, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada. raveen@phas.ubc.ca, Tiedje T, Webster SE, Penson S, Li W |
| Jazyk: |
angličtina |
| Zdroj: |
Optics letters [Opt Lett] 2010 Nov 15; Vol. 35 (22), pp. 3793-5. |
| DOI: |
10.1364/OL.35.003793 |
| Abstrakt: |
Single-crystal aluminum-gallium oxide films have been grown by molecular beam epitaxy in the corundum phase. Films of the (Al(1-x)Ga(x))(2)O(3) alloys doped with neodymium have favorable properties for solid-state waveguide lasers, including a high-thermal-conductivity sapphire substrate and a dominant emission peak in the 1090-1096 nm wavelength range. The peak position is linearly correlated to the unit cell volume, which is dependent on film composition and stress. Varying the Ga-Al alloy composition during growth will enable the fabrication of graded-index layers for tunable lasing wavelengths and low scattering losses at the interfaces. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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