Autor: |
Baral AK; Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India. ashok@physics.iitm.ac.in., Sankaranarayanan V |
Jazyk: |
angličtina |
Zdroj: |
Nanoscale research letters [Nanoscale Res Lett] 2010 Jan 30; Vol. 5 (3), pp. 637-43. Date of Electronic Publication: 2010 Jan 30. |
DOI: |
10.1007/s11671-010-9527-z |
Abstrakt: |
The ionic transport properties of nanocrystalline 20 mol% Eu, Gd, Dy, and Ho doped cerias, with average grain size of around 14 nm were studied by correlating electrical, dielectric properties, and various dynamic parameters. Gd-doped nanocrystalline ceria shows higher value of conductivity (i.e., 1.8 × 10-4 S cm-1 at 550°C) and a lower value of association energy of oxygen vacancies with trivalent dopants Gd3+ (i.e., 0.1 eV), compared to others. Mainly the lattice parameters and dielectric constants (ε∞) are found to control the association energy of oxygen vacancies in these nanomaterials, which in turn resulted in the presence of grain and grain boundary conductivity in Gd- and Eu-doped cerias and only significant grain interior conductivity in Dy- and Ho-doped cerias. |
Databáze: |
MEDLINE |
Externí odkaz: |
|