| Autor: |
Freer EM; Nanosys, Inc., 2625 Hanover Street, Palo Alto, California 94304, USA. efreer@nanosysinc.com, Grachev O, Duan X, Martin S, Stumbo DP |
| Jazyk: |
angličtina |
| Zdroj: |
Nature nanotechnology [Nat Nanotechnol] 2010 Jul; Vol. 5 (7), pp. 525-30. Date of Electronic Publication: 2010 Jun 06. |
| DOI: |
10.1038/nnano.2010.106 |
| Abstrakt: |
Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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