Novel phosphate-functionalized silica-based dispersions for selectively polishing silicon nitride over silicon dioxide and polysilicon films.

Autor: Veera Dandu PR; Department of Chemical and Biomolecular Engineering and Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13676, USA., Penta NK, Peethala BC, Babu SV
Jazyk: angličtina
Zdroj: Journal of colloid and interface science [J Colloid Interface Sci] 2010 Aug 01; Vol. 348 (1), pp. 114-8. Date of Electronic Publication: 2010 Apr 18.
DOI: 10.1016/j.jcis.2010.04.034
Abstrakt: We prepared and characterized novel phosphate-functionalized silica particles, and showed that, by using them during chemical mechanical polishing, both silicon dioxide and polysilicon removal rates can be suppressed while simultaneously enhancing silicon nitride removal rates. We achieved a silicon nitride:silicon dioxide:polysilicon removal rate selectivity of (>20):1:1. The measured removal rates of silicon dioxide, silicon nitride, and polysilicon are related to the electrostatic interactions and chemical reactivity between these films and the modified-silica abrasives.
(Copyright (c) 2010 Elsevier Inc. All rights reserved.)
Databáze: MEDLINE
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