22-nm immersion interference lithography.

Autor: Bloomstein TM, Marchant MF, Deneault S, Hardy DE, Rothschild M
Jazyk: angličtina
Zdroj: Optics express [Opt Express] 2006 Jul 10; Vol. 14 (14), pp. 6434-43.
DOI: 10.1364/oe.14.006434
Abstrakt: Immersion interference lithography was used to pattern gratings with 22-nm half pitch. This ultrahigh resolution was made possible by using 157-nm light, a sapphire coupling prism with index 2.09, and a 30-nm-thick immersion fluid with index 1.82. The thickness was controlled precisely by spin-casting the fluid rather than through mechanical means. The photoresist was a diluted version of a 193-nm material, which had a 157-nm index of 1.74. An analysis of the trade-off between fluid index, absorption coefficient, gap size and throughput indicated that, among the currently available materials, employing a high-index but absorbing fluid is preferable to using a highly transparent but low-index immersion media.
Databáze: MEDLINE