| Autor: |
Sterligov VA; Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, 252650 Kiev 28, Ukraine. sterl@mail.kar.net, Subbota YV, Shirshov YM, Pochekaylova LP, Venger EF, Konakova RV, Ilyin IY |
| Jazyk: |
angličtina |
| Zdroj: |
Applied optics [Appl Opt] 1999 Apr 20; Vol. 38 (12), pp. 2666-76. |
| DOI: |
10.1364/ao.38.002666 |
| Abstrakt: |
Angle-resolved scattering (ARS) intensities were measured in the backscattering hemisphere for the (1 0 0) and (1 1 1) faces of GaAs single crystals. Three epitaxial layers were deposited onto the GaAs (1 0 0) single-crystalline wafers. The laser elastic light scattering shows the presence of a regular surface microrelief whose orientation corresponds to the crystallographic axes in the surface plane. We studied the statistical properties of this microrelief and determined the parameters that characterize the surface. We propose to use the ARS ratio for two wavelengths (in our case, 632.8 and 441.6 nm) to determine the topographical properties of scattering and to study crystal surface defects. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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