Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces.

Autor: Ohmori K; Frederick-Seitz Materials Research Laboratory and Department of Materials Science, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, USA. ohmori@mrl.uiuc.edu, Foo YL, Hong S, Wen JG, Greene JE, Petrov I
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2005 Feb; Vol. 5 (2), pp. 369-72.
DOI: 10.1021/nl048340w
Abstrakt: Families of very high-index planes, such as those which bifurcate spontaneously to form a hill-and-valley structure composed of opposing facets, provide natural templates for the directed growth of position-controlled self-organized nanostructures with shapes determined by the facet width ratio R. For example, deposition of a few ML of Ge on Si(173 100 373), corresponding to R(113/517) = 1.7, results in a field of 40-nm-wide Ge nanowires along [72 187] with a uniform period of 60 nm.
Databáze: MEDLINE