Autor: |
Ohmori K; Frederick-Seitz Materials Research Laboratory and Department of Materials Science, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, USA. ohmori@mrl.uiuc.edu, Foo YL, Hong S, Wen JG, Greene JE, Petrov I |
Jazyk: |
angličtina |
Zdroj: |
Nano letters [Nano Lett] 2005 Feb; Vol. 5 (2), pp. 369-72. |
DOI: |
10.1021/nl048340w |
Abstrakt: |
Families of very high-index planes, such as those which bifurcate spontaneously to form a hill-and-valley structure composed of opposing facets, provide natural templates for the directed growth of position-controlled self-organized nanostructures with shapes determined by the facet width ratio R. For example, deposition of a few ML of Ge on Si(173 100 373), corresponding to R(113/517) = 1.7, results in a field of 40-nm-wide Ge nanowires along [72 187] with a uniform period of 60 nm. |
Databáze: |
MEDLINE |
Externí odkaz: |
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