| Autor: |
Righi MC; INFM-National Research Center on nanoStructures and bioSystems at Surfaces (S3), Dipartimento di Fisica, Università di Modena e Reggio Emilia, Via Campi 213/A, 41100 Modena, Italy. mcrighi@unimore.it, Pignedoli CA, Di Felice R, Bertoni CM, Catellani A |
| Jazyk: |
angličtina |
| Zdroj: |
Physical review letters [Phys Rev Lett] 2003 Sep 26; Vol. 91 (13), pp. 136101. Date of Electronic Publication: 2003 Sep 23. |
| DOI: |
10.1103/PhysRevLett.91.136101 |
| Abstrakt: |
We present first-principle calculations on the initial stages of SiC homoepitaxial growth on the beta-SiC(111)-(sqrt[3]xsqrt[3]) surface. We show that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. The motivation is twofold: On one hand, we find that the reconstruction controls the kinetics of adatom incorporation; on the other hand, we observe that the energy gain upon surface stability can induce the reorganization of the deposited material into a crystalline structure, thus revealing that a surface-driven mechanism is able to stabilize defect-free layer deposition on Si-rich surfaces. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
|
