Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As.

Autor: Braden JG; MARTECH and Department of Physics, Florida State University, Tallahassee, Florida 32306, USA., Parker JS, Xiong P, Chun SH, Samarth N
Jazyk: angličtina
Zdroj: Physical review letters [Phys Rev Lett] 2003 Aug 01; Vol. 91 (5), pp. 056602. Date of Electronic Publication: 2003 Jul 31.
DOI: 10.1103/PhysRevLett.91.056602
Abstrakt: We have carried out a direct measurement of the degree of spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency Ga(0.95)Mn(0.05)As/Ga junctions consistently yield an intrinsic value for P greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.
Databáze: MEDLINE