| Autor: |
Neugebauer J; Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany., Zywietz TK, Scheffler M, Northrup JE, Chen H, Feenstra RM |
| Jazyk: |
angličtina |
| Zdroj: |
Physical review letters [Phys Rev Lett] 2003 Feb 07; Vol. 90 (5), pp. 056101. Date of Electronic Publication: 2003 Feb 06. |
| DOI: |
10.1103/PhysRevLett.90.056101 |
| Abstrakt: |
Employing density-functional theory in combination with scanning tunneling microscopy, we demonstrate that a thin metallic film on a semiconductor surface may open an efficient and hitherto not expected diffusion channel for lateral adatom transport: adatoms may prefer diffusion within this metallic layer rather than on top of the surface. Based on this concept, we interpret recent experiments: We explain why and when In acts as a surfactant on GaN surfaces, why Ga acts as an autosurfactant, and how this mechanism can be used to optimize group-III nitride growth. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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