Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's.

Autor:	Richey, David M., Cressler, John D.
Zdroj:	IEEE Transactions on Electron Devices. Mar97, Vol. 44 Issue 3, p431. 10p. 19 Graphs.
Databáze:	Business Source Ultimate
Externí odkaz:	Zobrazit plný text záznamu