Electrical measurement of electron and hole mobilities as a function of injection level in silicon.

Autor: Bellone, Salvatore, Persiano, Giovanni Vito
Zdroj: IEEE Transactions on Electron Devices. Sep96, Vol. 43 Issue 9, p1459. 7p. 3 Black and White Photographs, 1 Diagram, 2 Charts, 11 Graphs.
Databáze: Business Source Ultimate