High Linearity and High Efficiency of Class-B Power Amplifiers in GaN HEMT Technology.
| Autor: | Paidi, Vamsi, Shouxuan Xie, Coffie, Robert, Moran, Brendan, Heikman, Sten, Keller, Stacia, Chini, Alessandro, DenBaars, Steven P., Mishra, Umesh K., Long, Stephen, Rodwell, Mark J.W. |
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| Zdroj: | IEEE Transactions on Microwave Theory & Techniques. Feb2003 Part 2 of 2 Parts, Vol. 51 Issue 2, p643. 10p. 11 Black and White Photographs, 7 Diagrams, 18 Graphs. |
| Databáze: | Business Source Ultimate |
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