Characterization of TSV-Induced Loss and Substrate Noise Coupling in Advanced Three-Dimensional CMOS SOI Technology.

Autor: Gu, Xiaoxiong1, Silberman, Joel A.1, Young, Albert M.1, Jenkins, Keith A.1, Dang, Bing1, Liu, Yong1, Duan, Xiaomin2, Gordin, Rachel3, Shlafman, Shlomo3, Goren, David1
Zdroj: IEEE Transactions on Components, Packaging & Manufacturing Technology. Nov2013, Vol. 3 Issue 11, p1917-1925. 9p.
Databáze: Business Source Ultimate