Gated-Diode Characterization of the Back-Channel Interface on Irradiated SOI Wafers.

Autor: Lawrence, R. K., Ioannou, D. E., Jenkins, W. C., Liu, S. T.
Zdroj: IEEE Transactions on Nuclear Science. Dec2001 Part 1 of 3, Vol. 48 Issue 6, p2140. 6p. 1 Diagram, 9 Graphs.
Databáze: Business Source Ultimate