To Optimize Electrical Properties of the Ultrathin (1.6 nm) Nitride/Oxide Gate Stacks With Bottom Oxide Materials and Post-Deposition Treatment.

Autor:	Chein-Hao Chen, Yean-Kuen Fang, Chih-Wei Yang, Shyh-Fann Ting, Yong-Shiuan Tsair, Ming-Fang Wang, Tuo-Hong Huo, Mo-Chiun Yu, Shih-Chang Chen, Jang, Simon M., Yu, Douglas C.H., Mong-Song Liang
Zdroj:	IEEE Transactions on Electron Devices. Dec2001, Vol. 48 Issue 12, p2769. 8p. 2 Diagrams, 6 Charts.
Databáze:	Business Source Ultimate
Externí odkaz:	Zobrazit plný text záznamu