Three-Dimensional CMOS SOI Integrated Circuit Using High-Temperature Metal-Induced Lateral Crystallization.

Autor: Chan, Victor W. C., Chan, Philip C. H., Chan, Mansun
Zdroj: IEEE Transactions on Electron Devices. Jul2001, Vol. 48 Issue 7, p1394. 6p. 1 Black and White Photograph, 2 Diagrams, 2 Charts, 7 Graphs.
Databáze: Business Source Ultimate