Three-Dimensional CMOS SOI Integrated Circuit Using High-Temperature Metal-Induced Lateral Crystallization.
Autor: | Chan, Victor W. C., Chan, Philip C. H., Chan, Mansun |
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Zdroj: | IEEE Transactions on Electron Devices. Jul2001, Vol. 48 Issue 7, p1394. 6p. 1 Black and White Photograph, 2 Diagrams, 2 Charts, 7 Graphs. |
Databáze: | Business Source Ultimate |
Externí odkaz: |