Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs.
| Autor: | Saito, Wataru1 wataru3.saito@toshiba.co.jp, Noda, Takao1, Kuraguchi, Masahiko2, Takada, Yoshiharu2, Tsuda, Kunio2, Saito, Yasunobu1, Omura, Ichiro3, Yamaguchi, Masakazu1 |
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| Zdroj: | IEEE Transactions on Electron Devices. Jul2009, Vol. 56 Issue 7, p1371-1376. 6p. 1 Diagram, 1 Chart, 6 Graphs. |
| Databáze: | Business Source Ultimate |
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