In[sub 0.48] Ga[sub 0.52] P/In[sub 0.20] Ga[sub 0.80] As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular-beam epitaxy using a valved phosphorus cracker cell .
| Autor: | Yoon, S. F., Gay, B. P., Zheng, H. Q. |
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| Zdroj: | International Journal of Electronics. Mar2000, Vol. 87 Issue 3, p257. 11p. |
| Databáze: | Business Source Ultimate |
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